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  notes : 1.pulse test: 300 s pulse width,1% duty cycle 2.thermal resistance (from junction to ambient)vertical p.c.b. mounted , 0.5"(12.7mm)lead length 3.measured at 1.0mhz and reverse voltage of 4.0 volts maximum repetitive peak reverse voltage 20 14 20 30 21 30 40 28 40 50 35 50 60 42 60 80 57 80 100 71 100 v rrm v olts v olts v olts v olts m a a mp a mps v rms v dc i (av) i fsm t stg v f i r r ja maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 0.375"(9.5mm) lead length(see fig. 1 ) maximum instantaneous forward voltage at 1.0 a(note 1 ) t =25 c t =100 c a a typical thermal resistance(note 2) typical junction capacitance(note 3) operating junction temperature range storage temperature range maximum instantaneous reverse current at rated dc blocking voltage(note 1) peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) 1.0 40.0 -65 to+150 -65 to+150 110 50.0 0.2 10 0.55 0.70 0 . 85 0.95 p f c/w c c c j t j 150 105 150 200 140 200 0.90 0.126(3.2) 0.102(2.6) 0.025(0.65) 0.787(20.0) min. 0.106(2.7) 0.091(2.3) dia. 0.021(0.55) dia. 0.787(20.0) min. MBR120TG thru mbr1200tg schottky barrier rectifier reverse voltage: 20 to 200 volts forward current: 1.0 ampere high current capability, low forward voltage drop high surge capability high temperature soldering guaranteed: for use in low voltage, high free wheeling, and polarity protection applications ? ? ? ? features plastic package has underwriters laboratory flammability ? classification 94v-0 metal silicon junction, majority carrier conduction ? low power loss, high efficiency r-1 package outline dimensions in inches and (millimeters) frequency inverters, 260 c/10 seconds at terminals component in accordance to rohs 2002/95/ec and ? weee 2002/96/ec ? ? mechanical data ? case: r-1 molded plastic body ? terminals: plated axial leads, solderable per mil-std-750, method 2026 ? polarity: color band denotes cathode end ? mounting position: any ? weight: 0.007 ounce, 0.20 gram maximum ratings and electrical characteristics ? ratings at 25 c ambient temperature unless otherwise specified. ? single phase, half wave, resistive or inductive load. ? for capacitive load derate by 20%. ? page 1/2 @ 2010 copyright by american first semiconductor symbols mbr type number 120 tg mbr 130 tg mbr 140 tg mbr 150 tg mbr 160 tg mbr 180 tg mbr 1100 tg mbr 1150 tg mbr 1200 tg units
0.01 0.001 0.01 0.1 1.0 100 10 0.1 1 0 10 20 30 40 50 50 10 0 20 0 40 60 80 100 1 10 100 0.2 0.4 0.6 0.8 1.0 1.6 1.4 1.2 0 25 50 75 100 125 150 175 0 0.25 0.5 0.75 1 fig.1-foward current derating curve fig.2-maximum non-repetitive peak forward surge current fig.3-typical instantaneous forward characteristics fig.4-typical reverse characteristics a v e r a g e f o r w a r d c u r r e n t a m p e r e s i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a m p e r e s ) i n s t a n t a n e o u s r e v e r s e c u r r e n t ( m a ) p e a k f o r w a r d s u r g e c u r r e n t ( a m p e r e s ) instantaneous forward voltage (volts) reverse voltage. volts t, pulse duration ,sec. percent of rated peak reverse voltage% number of cycles at 60hz lead temperature ( c) t j =25 c t j =125 c t j =150 c pulse width=300 s 1% duty cycle t j =t j max 8.3ms single half sine-wave (jedec method) t j =125 c t j =25 c t j = 100 c resistive or inductive load 0.375" (9.5mm) lead length 10 1 10 0.1 0.1 0.1 0.01 1 1 10 10 100 100 100 400 100 fig.5-typical junction capacitance fig.6-typical transient thermal impedance j u n c t i o n c a p a c i t a n c e ( p f ) t r a n s i e n t t h e r m a l i m p e d a n c e , c / w t j =25 c f=1.0mh z vsig=50mvp-p MBR120TG thru mbr1200tg rating and characteristic curves page 2/2 www.first-semi.com MBR120TG-mbr140tg mbr150tg-mbr1200tg MBR120TG-mbr140tg mbr150tg-mbr1200tg MBR120TG-mbr140tg mbr150tg-mbr1200tg


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